000			01966nam a2200121Ia 4500
008			220615s9999||||xx |||||||||||||| ||und||
100			_aGrasser, Tibor||Filipovic, Lado
245		0	_aMiniaturized Transistors
546			_aEnglish[eng]
650			_aMOSFET||n/a||total ionizing dose (TID)||low power consumption||process simulation||two-dimensional material||negative-capacitance||power consumption||technology computer aided design (TCAD)||thin-film transistors (TFTs)||band-to-band tunneling (BTBT)||nanowires||inversion channel||metal oxide semiconductor field effect transistor (MOSFET)||spike-timing-dependent plasticity (STDP)||field effect transistor||segregation||systematic variations||Sentaurus TCAD||indium selenide||nanosheets||technology computer-aided design (TCAD)||high-? dielectric||subthreshold bias range||statistical variations||fin field effect transistor (FinFET)||compact models||non-equilibrium Green’s function||etching simulation||highly miniaturized transistor structure||compact model||silicon nanowire||surface potential||Silicon-Germanium source/drain (SiGe S/D)||nanowire||plasma-aided molecular beam epitaxy (MBE)||phonon scattering||mobility||silicon-on-insulator||drain engineered||device simulation||variability||semi-floating gate||synaptic transistor||neuromorphic system||theoretical model||CMOS||ferroelectrics||tunnel field-effect transistor (TFET)||SiGe||metal gate granularity||buried channel||ON-state||bulk NMOS devices||ambipolar||piezoelectrics||tunnel field effect transistor (TFET)||FinFETs||polarization||field-effect transistor||line edge roughness||random discrete dopants||radiation hardened by design (RHBD)||low energy||flux calculation||doping incorporation||low voltage||topography simulation||MOS devices||low-frequency noise||high-k||layout||level set||process variations||subthreshold||metal gate stack||electrostatic discharge (ESD)
856			_uhttps://mdpi.com/books/pdfview/book/1370
942			_cEB
999			_c7648 _d7648