| 000 | 00673nam a22002417a 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220107122900.0 | ||
| 008 | 201022b xxu||||| |||| 00| 0 eng d | ||
| 020 | _a9781138076631 | ||
| 040 | _cIIITMK | ||
| 082 | _a621.395 LI/N | ||
| 100 |
_aLi, Hai _918459 |
||
| 245 |
_aNon volatile memory design: _bMagnetic, resistive, and phase change |
||
| 260 |
_aNew York, _bCRC Press, _c2012. |
||
| 300 | _axiv,189p. | ||
| 650 |
_aELECTRICAL ENGINEERING _918460 |
||
| 650 |
_aMOSFET _918461 |
||
| 650 |
_aSEMICONDUCTOR _918462 |
||
| 650 |
_aMOORES LAW _918463 |
||
| 650 |
_aMETAL OXIDE SEMICONDUCTOR _918464 |
||
| 700 |
_aChen, Yiran _918465 |
||
| 942 |
_2ddc _cBK |
||
| 999 |
_c6820 _d6820 |
||