000			01918nam a2200121Ia 4500
008			220621s9999||||xx |||||||||||||| ||und||
100			_aLeroux, Paul
245		0	_aRadiation Tolerant Electronics
546			_aEnglish[eng]
650			_asingle event effects||n/a||radiation-hardening-by-design (RHBD)||frequency divider by two||single event upset||Image processing||CMOS analog integrated circuits||FPGA||total ionizing dose (TID)||Impulse Sensitive Function||soft error||hardening by design||radiation hardening by design||X-rays||Single-Event Upsets (SEUs)||line buffer||heavy ions||VHDL||FPGA-based digital controller||radiation hardening by design (RHBD)||radiation hardening||SRAM-based FPGA||proton irradiation||ring oscillator||sensor readout IC||fault tolerance||space application||physical unclonable function||voltage controlled oscillator (VCO)||Ring Oscillators||analog single-event transient (ASET)||single event opset (SEU)||SEB||single event upsets||bipolar transistor||total ionizing dose||protons||triple modular redundancy (TMR)||gain degradation||space electronics||saturation effect||configuration memory||Co-60 gamma radiation||total ionization dose (TID)||frequency synthesizers||CMOS||PLL||TDC||single-event upsets (SEUs)||bandgap voltage reference (BGR)||4MR||single-shot||error rates||Radiation Hardening by Design||soft errors||heavy-ions||single-event effects (SEE)||single event transient (SET)||SEE testing||proton irradiation effects||RFIC||single event upset (SEU)||FMR||ionization||radiation tolerant||triplex–duplex||neutron irradiation effects||digital integrated circuits||single event gate rupture (SEGR)||power MOSFETs||ring-oscillator||selective hardening||voltage reference||nuclear fusion||TMR||gamma-rays||gamma ray||instrumentation amplifier||radiation effects||reference circuits||radiation-hardened
856			_uhttps://mdpi.com/books/pdfview/book/1518
942			_cEB
999			_c35869 _d35869