000			02092nam a2200121Ia 4500
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100			_aKhalili, Pedram
245		0	_aEmerging Memory and Computing Devices in the Era of Intelligent Machines
546			_aEnglish[eng]
650			_an/a||image classification||bipolar resistive switching characteristics||bioelectronic devices||self-directed channel (SDC)||programmable ramp-down current pulses||nanoparticles||protein||DRAM||convolutional neural networks||silicon oxide-based memristors||electrochemical metallization cell||magnetic tunnel junction||power gating||resistance switching mechanism||BCH||Fast Fourier Transform||nucleic acid||biomemory||conductive filament||resistive random access memory (RRAM)||non-von Neumann architecture||emerging technologies||Galois field||variability||logic-in-memory||charge spreading||memristor||Hebbian training||crossbar||quantum point contact||SONOS||bionanohybrid material||ECG||neuromorphic computing||CUDA||low-latency||iBM||Oxygen-related trap||nonvolatile memory||phase change memory||floating gate||non-von neumann architecture||3D-stacked||STT-MRAM||solution-based dielectric||GPU||Internet of things||configurable logic-in-memory architecture||memory wall||biologic gate||synaptic weight||guide training||ion conduction||perpendicular Nano Magnetic Logic (pNML)||Weibull distribution||real-time system||in-DRAM cache||task placement||dynamic voltage scaling||MCU (microprogrammed control unit)||wire resistance||multi-level cell||chalcogenide||decoder||character recognition||matrix-vector multiplication||hybrid||magnetoresistive random access memory||blockchain||electrochemical metallization (ECM)||RISC-V||U-shape recessed channel||neuromorphic system||in-memory computing||crossbar array||associative processor||low-power||plasma treatment||voltage-controlled magnetic anisotropy||flash memory||resistive memory||analogue computing||bioprocessor||annealing temperatures||data retention||flip-flop||low-power technique
856			_uhttps://mdpi.com/books/pdfview/book/2198
942			_cEB
999			_c28948 _d28948