000			01187nam a2200133Ia 4500
008			220620s9999||||xx |||||||||||||| ||und||
020			_a9783040000000
245		0	_aHigh-Density Solid-State Memory Devices and Technologies
546			_aEnglish[eng]
650			_aresistive switching memory||in-memory computing||crosspoint array||artificial intelligence||deep learning||dielectric||RTN||TAT||Wiener–Khinchin||transient analysis||phonon||surface roughness||spectral index||power spectrum||program suspend||3D NAND Flash||Solid State Drives||MOSFET||low-frequency noise||random telegraph noise||evaluation method||array test pattern||STT-MRAM||spintronics||CoFeB||composite free layer||low power electronics||NAND Flash memory||endurance||reliability||oxide trapped charge||artificial neural networks||neuromorphic computing||NOR Flash memory arrays||program noise||pulse-width modulation||3D NAND||floating gate cell||charge-trap cell||CMOS under array||bumpless||TSV||WOW||COW||BBCube||bandwidth||yield||power consumption||thermal management||n/a
700			_aMonzio Compagnoni, Christian||Shirota, Riichiro
856			_uhttps://mdpi.com/books/pdfview/book/5145
942			_cEB
999			_c27430 _d27430