TY  - BOOK
AU  - Medjdoub, Farid
TI  - Wide Bandgap Based Devices: Design, Fabrication and Applications
SN  - 9783040000000
KW  - GaN||high-electron-mobility transistor (HEMT)||ultra-wide band gap||GaN-based vertical-cavity surface-emitting laser (VCSEL)||composition-graded AlxGa1−xN electron blocking layer (EBL)||electron leakage||GaN laser diode||distributed feedback (DFB)||surface gratings||sidewall gratings||AlGaN/GaN||proton irradiation||time-dependent dielectric breakdown (TDDB)||reliability||normally off||power cycle test||SiC micro-heater chip||direct bonded copper (DBC) substrate||Ag sinter paste||wide band-gap (WBG)||thermal resistance||amorphous InGaZnO||thin-film transistor||nitrogen-doping||buried-channel||stability||4H-SiC||turn-off loss||ON-state voltage||breakdown voltage (BV)||IGBT||wide-bandgap semiconductor||high electron mobility transistors||vertical gate structure||normally-off operation||gallium nitride||asymmetric multiple quantum wells||barrier thickness||InGaN laser diodes||optical absorption loss||electron leakage current||wide band gap semiconductors||numerical simulation||terahertz Gunn diode||grooved-anode diode||Gallium nitride (GaN) high-electron-mobility transistors (HEMTs)||vertical breakdown voltage||buffer trapping effect||gallium nitride (GaN)||power switching device||active power filter (APF)||power quality (PQ)||metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT)||recessed gate||double barrier||high-electron-mobility transistors||copper metallization||millimeter wave||wide bandgap semiconductors||flexible devices||silver nanoring||silver nanowire||polyol method||cosolvent||tungsten trioxide film||spin coating||optical band gap||morphology||electrochromism||self-align||hierarchical nanostructures||ZnO nanorod/NiO nanosheet||photon extraction efficiency||photonic emitter||wideband||HEMT||power amplifier||jammer system||GaN 5G||high electron mobility transistors (HEMT)||new radio||RF front-end||AESA radars||transmittance||distortions||optimization||GaN-on-GaN||schottky barrier diodes||high-energy α-particle detection||low voltage||thick depletion width detectors||n/a
UR  - https://mdpi.com/books/pdfview/book/3759
ER  -