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MOS interface physics, process and characterization / Shengkai Wang and Xiaolei Wang.

By: Contributor(s): Material type: TextTextPublication details: Boca Raton, CRC Press, 2022.Edition: 1st edDescription: xi, 161 : illustrations ; 24 cmISBN:
  • 9781032106274
  • 9781032106281
Subject(s): Additional physical formats: Online version:: MOS interface physics, process and characterizationDDC classification:
  • 621.381 WAN/M
Summary: "The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental examples focusing on MOS structure. The volume will be an essential reference for academics and postgraduates within the field of microelectronics"--
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Item type Current library Call number Status Date due Barcode
Books Books Kerala University of Digital Sciences, Innovation and Technology Knowledge Centre Applied Electronics 621.381 WAN/M (Browse shelf(Opens below)) Available 6793

Includes bibliographical references.

"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental examples focusing on MOS structure. The volume will be an essential reference for academics and postgraduates within the field of microelectronics"--

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