High-Density Solid-State Memory Devices and Technologies
High-Density Solid-State Memory Devices and Technologies
English[eng]
9783040000000
resistive switching memory||in-memory computing||crosspoint array||artificial intelligence||deep learning||dielectric||RTN||TAT||Wiener–Khinchin||transient analysis||phonon||surface roughness||spectral index||power spectrum||program suspend||3D NAND Flash||Solid State Drives||MOSFET||low-frequency noise||random telegraph noise||evaluation method||array test pattern||STT-MRAM||spintronics||CoFeB||composite free layer||low power electronics||NAND Flash memory||endurance||reliability||oxide trapped charge||artificial neural networks||neuromorphic computing||NOR Flash memory arrays||program noise||pulse-width modulation||3D NAND||floating gate cell||charge-trap cell||CMOS under array||bumpless||TSV||WOW||COW||BBCube||bandwidth||yield||power consumption||thermal management||n/a
English[eng]
9783040000000
resistive switching memory||in-memory computing||crosspoint array||artificial intelligence||deep learning||dielectric||RTN||TAT||Wiener–Khinchin||transient analysis||phonon||surface roughness||spectral index||power spectrum||program suspend||3D NAND Flash||Solid State Drives||MOSFET||low-frequency noise||random telegraph noise||evaluation method||array test pattern||STT-MRAM||spintronics||CoFeB||composite free layer||low power electronics||NAND Flash memory||endurance||reliability||oxide trapped charge||artificial neural networks||neuromorphic computing||NOR Flash memory arrays||program noise||pulse-width modulation||3D NAND||floating gate cell||charge-trap cell||CMOS under array||bumpless||TSV||WOW||COW||BBCube||bandwidth||yield||power consumption||thermal management||n/a